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FinFET based Operational Transconductance Amplifier for Low Power Applications

M Nizamuddin1 , Divisha Sharma2

Section:Research Paper, Product Type: Journal Paper
Volume-7 , Issue-5 , Page no. 578-581, May-2019

CrossRef-DOI:   https://doi.org/10.26438/ijcse/v7i5.578581

Online published on May 31, 2019

Copyright © M Nizamuddin, Divisha Sharma . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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IEEE Style Citation: M Nizamuddin, Divisha Sharma, “FinFET based Operational Transconductance Amplifier for Low Power Applications,” International Journal of Computer Sciences and Engineering, Vol.7, Issue.5, pp.578-581, 2019.

MLA Style Citation: M Nizamuddin, Divisha Sharma "FinFET based Operational Transconductance Amplifier for Low Power Applications." International Journal of Computer Sciences and Engineering 7.5 (2019): 578-581.

APA Style Citation: M Nizamuddin, Divisha Sharma, (2019). FinFET based Operational Transconductance Amplifier for Low Power Applications. International Journal of Computer Sciences and Engineering, 7(5), 578-581.

BibTex Style Citation:
@article{Nizamuddin_2019,
author = {M Nizamuddin, Divisha Sharma},
title = {FinFET based Operational Transconductance Amplifier for Low Power Applications},
journal = {International Journal of Computer Sciences and Engineering},
issue_date = {5 2019},
volume = {7},
Issue = {5},
month = {5},
year = {2019},
issn = {2347-2693},
pages = {578-581},
url = {https://www.ijcseonline.org/full_paper_view.php?paper_id=4283},
doi = {https://doi.org/10.26438/ijcse/v7i5.578581}
publisher = {IJCSE, Indore, INDIA},
}

RIS Style Citation:
TY - JOUR
DO = {https://doi.org/10.26438/ijcse/v7i5.578581}
UR - https://www.ijcseonline.org/full_paper_view.php?paper_id=4283
TI - FinFET based Operational Transconductance Amplifier for Low Power Applications
T2 - International Journal of Computer Sciences and Engineering
AU - M Nizamuddin, Divisha Sharma
PY - 2019
DA - 2019/05/31
PB - IJCSE, Indore, INDIA
SP - 578-581
IS - 5
VL - 7
SN - 2347-2693
ER -

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Abstract

Design and simulation of novel operational transconductance amplifier (O.T.A.) based on SOI FinFET technology has been performed. The simulation results indicate that there is an increase in DC gain by 44.4%, C.M.R.R. by 1.5% , P.S.R.R. by 52.6%. The bandwidth of FinFET based O.T.A. is 161.301 MHz and CMOS O.T.A. is 1.00 MHz. The proposed circuit is designed using LTspice simulation at 1.5V supply Voltage. PTM 32 nm SOI FinFET has been employed for simulation. Comparative analysis of analog performance parameters of FinFET based O.T.A. and conventional CMOS based O.T.A. is also carried out.

Key-Words / Index Term

FinFET, CMOS, O.T.A., PTM, C.M.R.R., P.S.R.R., DC Gain

References

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